ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,526,988, issued on Jan. 13, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor device and method of manufacturing the same" was invented by Ki Hong Lee (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device, and a method of manufacturing the semiconductor device, includes a first source layer, a second source layer, a first insulating passivation layer partially interposed between the first source layer and the second source layer, and a gate structure located on the second source layer. The semiconductor device also includes a source contact structure passing through the gate structure, the sec...