US Patent Issued to SK hynix on Jan. 13 for "Method of fabricating the semiconductor memory device including channel pillar" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,526,987, issued on Jan. 13, was assigned to SK hynix Inc. (Icheon-si Gyeonggi-do, South Korea).

"Method of fabricating the semiconductor memory device including channel pillar" was invented by Ki Chang Jeong (Icheon-si, South Korea) and Nam Kuk Kim (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method of fabricating the semiconductor memory device. A stack layer, which includes sacrificial layers and first insulating interlayers alternately stacked, is formed. The sacrificial layers are positioned at an uppermost layer of the stack layer. A plurality of channel holes are formed through the stack layer. A first chann...