US Patent Issued to SK hynix on Jan. 13 for "Memory device and operating method of the memory device" (South Korean Inventor)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,296, issued on Jan. 13, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device and operating method of the memory device" was invented by Nam Cheol Jeon (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device, and an operating method of the memory device, includes a voltage generator for generating operating voltages and a row decoder for transmitting the operating voltages to a memory block through local lines. The memory device also includes page buffers connected to the memory block through bit lines, the page buffers applying voltages to the bit lines in response to page buffer control signals. The ...