US Patent Issued to SK hynix on Jan. 13 for "3D semiconductor device and method of fabricating the same" (South Korean Inventor)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,526,995, issued on Jan. 13, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"3D semiconductor device and method of fabricating the same" was invented by Young Gwang Yoon (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A 3D semiconductor device includes: a word line stack over a substrate; and a channel pillar vertically penetrating the word line stack. The word line stack includes a word line and an interlayer dielectric layer. The channel pillar includes: a central dielectric layer; a channel layer surrounding a side of the central dielectric layer; a tunneling dielectric layer having a cylinder shape surrounding a si...