ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,218,194, issued on Feb. 4, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).
"Semiconductor device and method for fabricating the same" was invented by Hae Jung Park (Gyeonggi-do, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including: a semiconductor substrate including an active region; a plurality of conductive structures formed over the semiconductor substrate; an isolation layer filling a space between the conductive structures and having an opening that exposes the active region between the conductive structures; a pad formed in a bottom portion of the opening and in contact with the active region; a plu...