US Patent Issued to SK hynix on Feb. 4 for "Memory device and manufacturing method of the memory device" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,219,761, issued on Feb. 4, was assigned to SK hynix Inc. (Icheon-si Gyeonggi-do, South Korea).

"Memory device and manufacturing method of the memory device" was invented by Won Geun Choi (Icheon-si Gyeonggi-do, South Korea), Jung Shik Jang (Icheon-si Gyeonggi-do, South Korea), Jang Won Kim (Icheon-si Gyeonggi-do, South Korea) and Mi Seong Park (Icheon-si Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "There are provided a memory device and a manufacturing method of the memory device. The memory device includes: a first gate stack structure and a second gate stack structure, disposed on a substrate; and a slit disposed between the ...