ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,303, issued on Feb. 3, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).
"Semiconductor memory device" was invented by Seung Hwan Kim (Gyeonggi-do, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device and method for making the same. The semiconductor memory device includes an active layer spaced apart from a substrate, extending in a direction parallel to the substrate, and including a channel; a bit line extending in a vertical direction to the substrate and contacting a first end portion of the active layer; a capacitor contacting a second end portion of the active layer; a word line including a high work...