US Patent Issued to SK HYNIX on Feb. 3 for "Semiconductor device and method for fabricating the same" (South Korean Inventor)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,324, issued on Feb. 3, was assigned to SK HYNIX INC. (Icheon-si, South Korea).

"Semiconductor device and method for fabricating the same" was invented by Jong Min Yun (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An semiconductor device may include a first conductive line; a second conductive line disposed to be spaced apart from the first conductive line; a variable resistance layer disposed between the first conductive line and the second conductive line; and an electrode layer which is disposed at least one of a first location between the first conductive lines and the variable resistance layer, or a second location betwee...