ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,602, issued on Feb. 3, was assigned to SK hynix Inc. (Icheon-si, Japan).
"Manufacturing method of semiconductor device" was invented by Jin Ha Kim (Icheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes forming a cell chip including a first substrate, a source layer on the first substrate, a stacked structure on the source layer, and a channel layer passing through the stacked structure and coupled to the source layer, flipping the cell chip, exposing a rear surface of the source layer by removing the first substrate from the cell chip, performing surface treatment on the rear s...