ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,313, issued on Feb. 18, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).
"Vertical memory device" was invented by Seung-Hwan Kim (Seoul, South Korea), Su-Ock Chung (Seoul, South Korea) and Seon-Yong Cha (Chungcheongbuk-do, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes: a first memory cell mat that includes first multi-layer level sub word lines positioned over a substrate; a second memory cell mat that is laterally spaced apart from the first memory cell mat and includes second multi-layer level sub word lines; a first sub word line driver circuit that is positioned underneath the first memory cell mat;...