ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,310, issued on Feb. 18, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).
"Memory and operation method thereof" was invented by Woongrae Kim (Gyeonggi-do, South Korea) and Chul Moon Jung (Gyeonggi-do, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An operation method of a memory may include entering a self-refresh mode, increasing a level of a back-bias voltage in response to entering the self-refresh mode, performing self-refresh operations in a first cycle, confirming that the back-bias voltage reaches a level of a first threshold voltage, and performing the self-refresh operations in a second cycle longer than the first cycle ...