US Patent Issued to SK hynix on Feb. 10 for "Semiconductor memory device with a gate contact surrounded by a conductive pattern" (South Korean Inventor)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,323, issued on Feb. 10, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor memory device with a gate contact surrounded by a conductive pattern" was invented by Kang Sik Choi (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "There are provided a semiconductor memory device and a manufacturing method of a semiconductor memory device. The semiconductor memory device includes a conductive gate contact penetrating a contact region of a stepped stack structure including a plurality of interlayer insulating layers and a plurality of conductive patterns, which are alternately stacked."

The patent was filed on Dec. ...