US Patent Issued to SK hynix on Dec. 30 for "Semiconductor device having a low-k gate side insulating layer" (South Korean Inventor)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,939, issued on Dec. 30, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor device having a low-k gate side insulating layer" was invented by Young Gwang Yoon (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a gate structure crossing an active region of a substrate, and spacers formed on both side surfaces of the gate structure. The gate structure includes an interfacial insulating layer formed on the substrate, a gate dielectric layer formed on the interfacial insulating layer, a gate barrier layer and gate side insulating layers formed on the gate dielectric layer, and a ...