ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,920, issued on Dec. 30, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).
"Semiconductor device and method for fabricating the same" was invented by Ji Hoon An (Gyeonggi-do, South Korea), Byung Sang Kim (Gyeonggi-do, South Korea) and Seung Bum Hong (Gyeonggi-do, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present invention may provide a semiconductor device capable of covering the entire surface of a dielectric layer by increasing continuity while maintaining a thickness of an upper electrode of a capacitor, and a method of manufacturing the same. In addition, embodiments of the present invention may provide...