ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,914, issued on Dec. 30, was assigned to SK hynix Inc. (Icheon, South Korea).
"Semiconductor device and method for fabricating the same" was invented by Young-In Bae (Icheon, South Korea), Jong Chul Lee (Icheon, South Korea), Nam Joo Kim (Icheon, South Korea) and Hong Seuk Lee (Icheon, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device, may include: providing a substrate; forming a first stacked structure over the substrate, the first stacked structure including a plurality of first lower lines extending in a first direction, a plurality of first upper lines disposed over the first lower lines a...