ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,130, issued on Dec. 30, was assigned to SK hynix Inc. (Icheon-si, South Korea).
"Memory device having support structure" was invented by Jae Ho Kim (Icheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes: a stack structure; first support structures penetrating the stack structure, the first support structures being spaced apart from each other in a first direction; a first protrusion pattern penetrating the stack structure, the first protrusion pattern being spaced apart from one of the first support structures in a second direction; a first outer support structure penetrating the stack structure, the first ou...