US Patent Issued to SK hynix on Dec. 30 for "Memory device and operating method of memory device" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,163, issued on Dec. 30, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device and operating method of memory device" was invented by Chan Keun Kwon (Icheon-si, South Korea) and Jaehyeong Hong (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device may include memory banks comprised of memory blocks; data compressing circuits connected to memory blocks and first merge circuits. A second merge circuit receives output from the first merge circuits. A delay detecting circuit generates delay control signals by comparing the output control signals. A compensating circuit calibrates the output control signals...