US Patent Issued to SK hynix on Dec. 30 for "Apparatus and method for programming data into non-volatile memory device" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,147, issued on Dec. 30, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Apparatus and method for programming data into non-volatile memory device" was invented by Soo Yeol Chai (Gyeonggi-do, South Korea) and Hee Joo Lee (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device comprising: a memory cell array, and a controller configured to connect, in a first interval equal to or longer than a bit line setup interval, each of first and second bit lines, which are connected to cells respectively having first and second program states, to a node of a first permission voltage, connect, in the first interval, a ...