US Patent Issued to SK HYNIX on Dec. 23 for "Semiconductor device and method for fabricating the same" (South Korean Inventor)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,418, issued on Dec. 23, was assigned to SK HYNIX INC. (Icheon-si, South Korea).

"Semiconductor device and method for fabricating the same" was invented by Jeong Hwan Song (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include: a first conductive line; a second conductive line disposed over the first conductive line to be spaced apart from the first conductive line; a variable resistance layer disposed over the first conductive line and below the second conductive line; at least one of a first dielectric layer or a second dielectric layer; at least one of a first contact or a second contact; and at l...