US Patent Issued to SK hynix on Dec. 2 for "Semiconductor memory device and method of manufacturing semiconductor memory device" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,431, issued on Dec. 2, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor memory device and method of manufacturing semiconductor memory device" was invented by Jae Taek Kim (Icheon-si, South Korea) and Hye Yeong Jung (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a discharge contact passing through a source structure, a gate stack disposed on a partial region of the source structure, a vertical structure passing through the gate stack, and an insulating pattern passing through the source structure between the vertical structure and the discharge contact."

The patent ...