US Patent Issued to SK hynix on Dec. 16 for "Semiconductor device having a three-dimensional structure and method for fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,605, issued on Dec. 16, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor device having a three-dimensional structure and method for fabricating the same" was invented by Hyewon Yoon (Gyeonggi-do, South Korea) and Seung Hwan Kim (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes: forming a stack body by alternately stacking a plurality of semiconductor layers and a plurality of etch stopper layers over a substrate; forming a plurality of steps by etching a first portion of the stack body to stop at the etch stopper layer; forming a slit by etching a...