ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,380,951, issued on Aug. 5, was assigned to SK hynix Inc. (Icheon-si, South Korea).
"Memory device and operating method thereof" was invented by Yeong Jo Mun (Icheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell array including a first memory cell connected to a first channel structure, and a second memory cell connected to a second channel structure; a peripheral circuit for performing a program operation of storing data in the first and second memory cells commonly connected to a word line; and a program operation controller for controlling the peripheral circuit to perform the program operation, t...