ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,399,625, issued on Aug. 26, was assigned to SK hynix Inc. (Icheon-si, South Korea).
"Memory device and method of operating the same" was invented by Hee Youl Lee (Icheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a memory device, and a method of operating the memory device that includes a memory block including memory cells. The memory device also includes a voltage generator configured to apply a read voltage and pass voltages to word lines coupled to the memory block. The voltage generator is configured to apply the read voltage to a selected word line among the word lines and apply different pass ...