ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,394,484, issued on Aug. 19, was assigned to SK hynix Inc. (Icheon-si, South Korea).
"Memory device including select lines" was invented by Yun Cheol Han (Icheon-si, South Korea), Nam Kuk Kim (Icheon-si, South Korea) and Dae Ro Song (Icheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a memory device including a first memory block including a first group of cell plugs and a second group of cell plugs, a second memory block including a third group of cell plugs and a fourth group of cell plugs, a connection region located between the first and second memory blocks, a first source select line commonly cou...