US Patent Issued to SK hynix on Aug. 12 for "Vertical semiconductor device and fabrication method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,598, issued on Aug. 12, was assigned to SK hynix Inc. (Icheon, South Korea).

"Vertical semiconductor device and fabrication method thereof" was invented by Eun-Ho Kim (Suwon, South Korea), Eun-Joo Jung (Icheon, South Korea), Jong-Hyun Yoo (Suwon, South Korea), Ki-Jun Yun (Yongin, South Korea) and Sung-Hoon Lee (Icheon, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating semiconductor device includes forming an alternating stack that includes a lower multi-layered stack and an upper multi-layered stack by alternately stacking a dielectric layer and a sacrificial layer over a substrate, forming a vertical trench that di...