ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,597, issued on Aug. 12, was assigned to SK hynix Inc. (Icheon-si, South Korea).
"Memory device and method of manufacturing the same" was invented by Jae Taek Kim (Icheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided herein may be a memory device and a method of manufacturing the same. The memory device may include a plurality of memory blocks formed on a source line, the plurality of memory blocks separated by a slit, a source contact formed in the slit, a plurality of normal bit lines arranged, in parallel, over the memory blocks, the plurality of normal bit lines being spaced apart in a first direction and extending in a ...