US Patent Issued to SK hynix on Aug. 12 for "Fail data augmentation device and method for random access memory" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,386,690, issued on Aug. 12, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Fail data augmentation device and method for random access memory" was invented by Seung Yeol Lee (Gyeonggi-do, South Korea), Jung Soo Kim (Gyeonggi-do, South Korea) and Chang Hoon Lee (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A fail data augmentation device may input a plurality of fail data units to a data augmentation model, obtain a plurality of augmented fail data units outputted from the data augmentation model, and delete one or more of the augmented fail data units. The plurality of fail data units and the plurality of augmented ...