ALEXANDRIA, Va., June 9 -- United States Patent no. 12,289,879, issued on April 29, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).
"Memory device and method for fabricating the same" was invented by Kangsik Choi (Gyeonggi-do, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a substrate, an active layer that is spaced apart from the substrate and laterally oriented, a word line that is laterally oriented in parallel to the active layer along one side of the active layer, an active body that is vertically oriented by penetrating through the active layer, a bit line that is vertically oriented by penetrating through the active layer to be spaced apart from one side ...