US Patent Issued to SK hynix on April 22 for "Semiconductor memory device and operating method thereof" (South Korean Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,301, issued on April 22, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor memory device and operating method thereof" was invented by Chul Moon Jung (Gyeonggi-do, South Korea) and Woongrae Kim (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes: a memory cell region including a plurality of cell mats in each of which a plurality of rows are disposed, each row coupled to normal cells and row-hammer cells; a repair control circuit suitable for generating a pairing flag denoting whether a cell mat in which an active row corresponding to an active address is disposed, is ...