ALEXANDRIA, Va., June 6 -- United States Patent no. 12,284,809, issued on April 22, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor memory device and method of manufacturing the same" was invented by Jae Taek Kim (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device, and a method of manufacturing the same, includes a gate stacked body including interlayer insulating layers and conductive patterns that are alternately stacked on a substrate in a vertical direction, a channel structure penetrating at least a portion of the gate stacked body and having a first end protruding upward higher than the gate stacked body, a memory layer enclosing a...