US Patent Issued to SK hynix on April 22 for "Memory device and method of operation with sequential discharging of word lines" (South Korean Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,323, issued on April 22, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device and method of operation with sequential discharging of word lines" was invented by Sung Kun Park (Icheon-si, South Korea) and Myoung Kwan Cho (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided herein may be a memory device and a method of operating the same. The memory device may include a memory cell string including a plurality of memory cells coupled to a plurality of word lines, a peripheral circuit configured to perform an operation that applies an operating voltage to a selected word line and applying a pass voltage to un...