US Patent Issued to SK hynix on April 22 for "Memory control circuit providing die-level read retry table, memory package, and storage device" (South Korean Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,307, issued on April 22, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory control circuit providing die-level read retry table, memory package, and storage device" was invented by Jae Yong Son (Icheon-si, South Korea), Nam Kyeong Kim (Icheon-si, South Korea), Hoon Cho (Icheon-si, South Korea), Hyuk Min Kwon (Icheon-si, South Korea), Dae Sung Kim (Icheon-si, South Korea), Jang Seob Kim (Icheon-si, South Korea) and Sang Ho Yun (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A storage device includes a memory including a plurality of word lines, a plurality of bit lines and a plurality of memory cells, and a control...