US Patent Issued to SK hynix on April 1 for "Semiconductor device and method for fabricating the same" (South Korean Inventor)

ALEXANDRIA, Va., April 2 -- United States Patent no. 12,266,711, issued on April 1, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor device and method for fabricating the same" was invented by Beom-Yong Kim (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor layer stack includes a first conductive layer, a dielectric layer including a high-k material, which is formed on the first conductive layer, a second conductive layer formed on the dielectric layer, and an interface control layer formed between the dielectric layer and the second conductive layer and including a leakage blocking material, a dopant material, a high bandgap material and a high w...