US Patent Issued to SK Hynix NAND Product Solutions on June 24 for "Split block array for 3D NAND memory" (American, Chinese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,340,845, issued on June 24, was assigned to SK Hynix NAND Product Solutions Corp. (Rancho Cordova, Calif.).

"Split block array for 3D NAND memory" was invented by Chang Wan Ha (San Ramon, Calif.), Deepak Thimmegowda (Fremont, Calif.), Hoon Koh (San Jose, Calif.), Richard M. Gularte (Santa Clara, Calif.), Liu Liu (Dalian, China), David Meyaard (Boise, Idaho) and Ahsanur Rahman (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An embodiment of a memory device may include a full block memory array of a lower tile of 3D NAND string memory cells, a full block memory array of an upper tile of 3D NAND string memory cells, a first portion of a...