ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,158, issued on June 17, was assigned to SK Hynix NAND Product Solutions Corp. (Rancho Cordova, Calif.).

"Pump discharge sequence improvements in external power supply mode for pulse recovery phases in non-volatile memory" was invented by Soo-yong Park (San Jose, Calif.), Pranav Chava (Folsom, Calif.) and Binh Ngo (Folsom, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Systems, apparatuses and methods may provide for technology that includes a charge pump and applies a program voltage from the charge pump to selected wordlines in the NAND memory. The technology may also conduct a discharge of the program voltage from the charge pump and mainta...