US Patent Issued to SK Hynix NAND Product Solutions on Dec. 2 for "Binary metallic alloy source and drain (BMAS) for applying compressive stress in non-planar transistor architectures" (Washington Inventor)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,477, issued on Dec. 2, was assigned to SK Hynix NAND Product Solutions Corp. (Rancho Cordova, Calif.).

"Binary metallic alloy source and drain (BMAS) for applying compressive stress in non-planar transistor architectures" was invented by Navid Paydavosi (Seattle).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments disclosed herein include semiconductor devices and methods of forming such semiconductor devices. In an embodiment, a semiconductor device comprises a semiconductor channel, a source region adjacent to the semiconductor channel, and a drain region adjacent to the semiconductor channel. In an embodiment, the source region and the drain...