US Patent Issued to SK Hynix NAND Product Solutions on Aug. 12 for "Dynamic single-level cell write through in memory devices" (Colorado Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,386,745, issued on Aug. 12, was assigned to SK Hynix NAND Product Solutions Corp. (Rancho Cordova, Calif.).

"Dynamic single-level cell write through in memory devices" was invented by George Kalwitz (Mead, Colo.).

According to the abstract* released by the U.S. Patent & Trademark Office: "This application is directed to writing data in a memory device supporting multiple bits per cell by dynamically using a y-level cell (YLC) cache. The memory device is coupled into a host device, and includes a plurality of x-level cell (XLC) memory blocks, where x is greater than one and greater than y. The memory device identifies a write shaping status of the host device. Based on the write shapi...