US Patent Issued to SK hynix, Seoul National University R&DB Foundation on Oct. 14 for "NAND flash memory device capable of selectively erasing one flash memory cell and operation method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,469, issued on Oct. 14, was assigned to SK hynix Inc. (Icheon, South Korea) and Seoul National University R&DB Foundation (Seoul, South Korea).

"NAND flash memory device capable of selectively erasing one flash memory cell and operation method thereof" was invented by Honam Yoo (Icheon, South Korea) and Jong-Ho Lee (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A flash memory device includes a cell array and a control circuit. The cell array includes a first NAND string having first flash memory cells having control gates respectively connected to word lines, and a first bit line selection switch connecting the first flash memory...