US Patent Issued to SK hynix, Seoul National University R&DB Foundation on Dec. 30 for "NAND flash memory device with enhanced data retention characteristics and operating method thereof" (South Korean Inventor)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,161, issued on Dec. 30, was assigned to SK hynix Inc. (Icheon, South Korea) and Seoul National University R&DB Foundation (Seoul, South Korea).

"NAND flash memory device with enhanced data retention characteristics and operating method thereof" was invented by Sung Ho Park (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A flash memory device includes a control circuit and a cell array including a first memory string including a plurality of first flash memory cells having control gates connected to a plurality of word lines, respectively, and a first bit line selection switch connecting the plurality of first flash memory cells to...