US Patent Issued to SK hynix, Merck Patent on March 18 for "Atomic layer etching method using ligand exchange reaction" (South Korean Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,075, issued on March 18, was assigned to SK hynix Inc. (Icheon, South Korea) and Merck Patent GmbH (Darmstadt, Germany).

"Atomic layer etching method using ligand exchange reaction" was invented by Jae Chul Lee (Icheon-si, South Korea), Hyun Sik Noh (Icheon-si, South Korea), Dong Kyun Lee (Icheon-si, South Korea), Eun Ae Jung (Icheon-si, South Korea), Kyoung-Mun Kim (Daejeon, South Korea), Jooyong Kim (Siheung-si, South Korea), Younghun Byun (Jeungpyeong-gun, South Korea), Byeong Il Yang (Daejeon, South Korea) and Changhyun Jin (Incheon, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An atomic layer etching method using a ligand exchang...