US Patent Issued to SK hynix, Korea Advanced Institute of Science and Technology on Jan. 27 for "Nonvolatile memory device and operation method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,537,066, issued on Jan. 27, was assigned to SK hynix Inc. (Icheon, South Korea) and Korea Advanced Institute of Science and Technology (Daejeon, South Korea).

"Nonvolatile memory device and operation method thereof" was invented by Jung Woo Lee (Icheon, South Korea), Yang Kyu Choi (Seoul, South Korea) and Ji Man Yu (Daejeon, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nonvolatile memory device and an operating method thereof are disclosed. An operating method of a nonvolatile memory device may comprise providing the nonvolatile memory device including a memory transistor, the memory transistor including a source, a drain, a channel disp...