US Patent Issued to SK hynix, IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) on Jan. 13 for "Semiconductor device for boosting power provided to core circuit" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,275, issued on Jan. 13, was assigned to SK hynix Inc. (Icheon-si, South Korea) and IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) (Seoul, South Korea).

"Semiconductor device for boosting power provided to core circuit" was invented by Jin Hoon Hyun (Icheon-si, South Korea) and Jaemyung Lim (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a driving circuit configured to generate a core voltage using a power supply voltage; a core circuit configured to perform a first operation and a second operation following the first operation, using the core voltage; and a boosting circuit...