US Patent Issued to SJ Semiconductor(Jiangyin) on Jan. 13 for "Pop structure of three-dimensional fan-out memory and packaging method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,581, issued on Jan. 13, was assigned to SJ Semiconductor(Jiangyin) Corp. (Jiangyin, China).

"Pop structure of three-dimensional fan-out memory and packaging method thereof" was invented by Yenheng Chen (Jiangyin, China) and Chengchung Lin (Jiangyin, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The package-on-package (POP) structure includes a first package unit of three-dimensional fan-out memory chips and a SiP package unit of the two-dimensional fan-out peripheral circuit chip. The first package unit includes: memory chips laminated in a stepped configuration; a molded substrate; wire bonding structures; a first rewiring layer; a first enc...