ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,724, issued on Dec. 16, was assigned to SiOnyx LLC (Beverly, Mass.).
"Shallow trench textured regions and associated methods" was invented by Homayoon Haddad (Beaverton, Ore.) and Jutao Jiang (Tigard, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor layer having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor layer and positioned to interact with electromagnetic radiation. The textured region can be formed from a series of shallow trench isolation fea...