US Patent Issued to SILTRONIC on Oct. 7 for "Method for depositing a silicon germanium layer on a substrate" (German Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,437,989, issued on Oct. 7, was assigned to SILTRONIC AG (Munich).

"Method for depositing a silicon germanium layer on a substrate" was invented by Lucas Becker (Simbach, Germany) and Peter Storck (Burghausen, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method heteroepitaxially deposits a silicon germanium layer on a substrate. The silicon germanium layer has a composition Si1-xGex, where 0.01less than equal toxless than equal to1. The substrate is a silicon single crystal wafer or a silicon-on-insulator wafer. The method includes: providing a mask layer atop the substrate; removing the mask layer in an edge region of the substrate to provide...