US Patent Issued to SILTRONIC on June 17 for "Method for depositing an epitaxial layer on a substrate wafer" (German Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,331,424, issued on June 17, was assigned to SILTRONIC AG (Munich).

"Method for depositing an epitaxial layer on a substrate wafer" was invented by Thomas Stettner (Waging am See, Germany) and Martin Wengbauer (Winhoering, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "An epitaxial layer is deposited on a substrate wafer by a method including measuring an edge geometry of the wafer, placing the wafer at a position in a pocket of a susceptor of a device for depositing the layer based on the edge geometry, heating the wafer, and passing a process gas over the wafer. Thickness characteristic values are assigned to edge portions based on the edge geo...