ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,232, issued on Sept. 9, was assigned to SILICONWARE PRECISION INDUSTRIES Co. LTD. (Taichung, Taiwan).
"Substrate structure" was invented by Pei-Geng Weng (Taichung, Taiwan), Fang-Lin Tsai (Taichung, Taiwan), Wei-Son Tsai (Taichung, Taiwan) and Yih-Jenn Jiang (Taichung, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate structure is provided with a first electrical contact pad formed on an insulating layer of a substrate body, where the first electrical contact pad includes a first pad portion disposed on the insulating layer and at least one first protruding portion embedded in the insulating layer, so that the first pad portion is e...