US Patent Issued to Silicon Storage Technology on Oct. 21 for "Method of forming a device with planar split gate non-volatile memory cells, planar HV devices, and FinFET logic devices on a substrate" (French, American Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,136, issued on Oct. 21, was assigned to Silicon Storage Technology Inc. (San Jose, Calif.).

"Method of forming a device with planar split gate non-volatile memory cells, planar HV devices, and FinFET logic devices on a substrate" was invented by Serguei Jourba (Aix en Provence, France), Catherine Decobert (Pourrieres, France), Feng Zhou (Fremont, Calif.), Jinho Kim (Saratoga, Calif.), Xian Liu (Sunnyvale, Calif.) and Nhan Do (Saratoga, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a device on a silicon substrate having first, second and third areas includes recessing an upper substrate surface in the first and third areas...