US Patent Issued to Silicon Storage Technology on Jan. 27 for "System and method for implementing temperature compensation in a memory device" (American, French Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,535,966, issued on Jan. 27, was assigned to Silicon Storage Technology Inc. (San Jose, Calif.).

"System and method for implementing temperature compensation in a memory device" was invented by Gilles Festes (Fuveau, France), Steven Lemke (Boulder Creek, Calif.), Louisa Schneider (San Jose, Calif.), Henry A. Om'Mani (Santa Clara, Calif.) and Hieu Van Tran (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of operating memory cells includes programming memory cells at a first temperature to different program states associated with first read current values confirmed by using nominal read conditions. Modified read conditions are dete...