US Patent Issued to Silicon Storage Technology on Feb. 10 for "Program speed compensation for non-volatile memory cells" (California Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,547,327, issued on Feb. 10, was assigned to Silicon Storage Technology Inc. (San Jose, Calif.).

"Program speed compensation for non-volatile memory cells" was invented by Yi Song (San Jose, Calif.), Xian Liu (Sunnyvale, Calif.) and Jinho Kim (Saratoga, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of programming memory cells that includes reading the memory cells to determine respective read currents for the memory cells. Respective ones of the memory cells are assigned to one of a plurality of groups of the memory cells, wherein respective ones of the plurality of groups of the memory cells are associated with a different range of read...